MTP40N10E |
Part Number | MTP40N10E |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MTP40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design a... |
Features |
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
100 100
± 20 ± 40 40 29 140
169 1.35
Operating and Storage Temperature Range
TJ, Tstg
−55 to 150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 75 Vdc, VGS = 10 Vdc, Peak IL = 40 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance − Junction to Case − Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RθJC RθJA
TL
800
0.74 62.5 260
Unit ... |
Document |
MTP40N10E Data Sheet
PDF 202.38KB |
Similar Datasheet
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