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MTP6N60E |
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| Part Number | MTP6N60E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degr... |
| Features |
ature
http://onsemi.com
TMOS POWER FET 6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
TO−220AB CASE 221A−09
Style 5
D
G S
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 7
1
Publication Order Number: MTP6N60E/D
MTP6N60E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation Derate above 25°C
VDSS VDGR VGS VGSM
ID ID IDM PD
600 V... |
| Document |
 MTP6N60E Data Sheet
PDF 167.80KB |
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