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| Part Number | MTP6P20E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTP6P20E |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTP6P20E Preferred Device Power MOSFET 6 Amps, 200 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed swi. |
| Features | (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 μs) ID ID IDM 6.0 3.9 21 Total Power Dissipation Derate above 25°C PD 75 0.6 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistan. |
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Desde 2024. D4U Semiconductor.
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