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| Part Number | MTP6N60E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTP6N60E |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced . |
| Features |
Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS ® D CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Contin. |
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Desde 2024. D4U Semiconductor.
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