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MTP6P20E |
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| Part Number | MTP6P20E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6P20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6P20E Motorola Preferred Device P–Channel Enhancement... |
| Features |
1.0 OHM
®
D
G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 6.0 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperatur... |
| Document |
 MTP6P20E Data Sheet
PDF 216.09KB |
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