| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGS |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGS |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VD |
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Fairchild Semiconductor |
N-Channel QFET MOSFET • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A • Low Gate Charge (Typ. 4.9 nC) • Low Crss (Typ. 4.1 pF) • 100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TST |
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ON Semiconductor |
N-Channel MOSFET • 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS |
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Desde 2024. D4U Semiconductor.
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