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FQN1N60C |
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| Part Number | FQN1N60C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
| Features |
• 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 3.5 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 100°C) 600 V ±30 V A 0.3 0.18 IDM Drain Current − Pulsed (Note 1) 1.2 EAS Single Pulsed Avalanche Energy (Note 2) 33 IAR Avalanche Current (Note 1) 0.3 EAR Repetitive Avalanche Energy (Note 1) 0.3 dv/dt Peak Diode Recovery dv/d... |
| Document |
 FQN1N60C Data Sheet
PDF 417.76KB |
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