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FQNL1N50B |
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| Part Number | FQNL1N50B |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQNL1N50B 500 0.27 0.17 1.08 ± 30 (Note 1) (Note 1) (Note 2) Units V A A A V A mJ V/ns W W/°C °C °C Gate-Source Voltage Avalanche Current Repetitive Aval... |
| Document |
 FQNL1N50B Data Sheet
PDF 620.16KB |
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Desde 2024. D4U Semiconductor.
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