| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
200V N-Channel MOSFET • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semi |
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ON Semiconductor |
500V P-Channel MOSFET • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant S D ! GS D-PAK Absolute Ma |
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Fairchild Semiconductor |
500V P-Channel MOSFET • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant I-PAK FQU Series G! S ! ● ● ▶▲ ● ! D Absolute Maximu |
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Fairchild Semiconductor |
200V P-Channel MOSFET • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6 6 |
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Fairchild Semiconductor |
N-Channel MOSFET • 9.0 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 17 pF) • 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VG |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! |
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ON Semiconductor |
P-Channel MOSFET • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant D D G S D-PAK Absolute Maxim |
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ON Semiconductor |
P-Channel MOSFET • -2.7 A, -400 V, RDS(on) = 3.1 Ω (Max.) @ VGS = -10 V, Description N These P-Channel enhancement mode power field effect IG transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This S advanced technology h |
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Fairchild Semiconductor |
200V N-Channel MOSFET + < 6 < !$ : + 2-)374 2-0**74 : )** '( 89 .* 8 ±.* + % % % + |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET + < 6 < !$ : + 2-)374 2-0**74 : )** '( 89 .* 8 ±.* + % % % + |
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Fairchild Semiconductor |
60V P-Channel MOSFET • -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V, ID = -4.7 A • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 45 pF) • 100% Avalanche Tested G S D D-PAK GDS S G I-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDS |
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Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET • • • • • • • 3.2A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic dr |
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Fairchild Semiconductor |
400V P-Channel MOSFET • • • • • • -2.7A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D |
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Fairchild Semiconductor |
150V N-Channel MOSFET • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A • Low Gate Charge (Typ. 5.4 nC) • Low Crss (Typ. 7.5 pF) • 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. , 6 6 , |
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Fairchild Semiconductor |
200V N-Channel MOSFET ; 5 ; !$ 9 + 1-)673 1-.**73 9 )** '( )8 .6 ) ±'* + % % % + < % < |
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Fairchild Semiconductor |
200V N-Channel MOSFET • 3.8 A, 200 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 1.9 A • Low Gate Charge (Typ. 4.8 nC) • Low Crss (Typ. 6.0 pF) • 100% Avalanche Tested • RoHS Compliant D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Sym |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V • Low gate charge ( typical 18nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D D ! D-PAK G S FQD Series GDS I-PAK FQU Series Absolu |
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Fairchild Semiconductor |
100V N-Channel MOSFET • • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S |
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Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET • • • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirments allowing direct operation from logic dri |
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Fairchild Semiconductor |
200V N-Channel MOSFET < 7 < !$ : + 3-)'85 3-1**85 : )** '( (9 )1 ±(* + % % % + > % > + |
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Desde 2024. D4U Semiconductor.
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