FQD4N20L |
Part Number | FQD4N20L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
Features |
• • • • • • • 3.2A, 200V, RDS(on) = 1.35Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD4N20L / FQU4N20L 200 3.2 2.02 12... |
Document |
FQD4N20L Data Sheet
PDF 519.65KB |
Similar Datasheet
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