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FQD12P10TM-F085 |
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| Part Number | FQD12P10TM-F085 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored... |
| Features |
• -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant D D G S D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche ... |
| Document |
 FQD12P10TM-F085 Data Sheet
PDF 698.59KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FQD12P10TM_F085 |
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100V P-Channel MOSFET |
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| 2 | FQD12P10 |
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| 3 | FQD12N06 |
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| 4 | FQD12N20 |
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| 5 | FQD12N20L |
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| 6 | FQD12N20L |
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Desde 2024. D4U Semiconductor.
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