ON Semiconductor EMT Hoja de datos

No.	parte #	Fabricante	Descripción
1	LP3000P100	Filtronic Compound Semiconductors	PACKAGED 2W POWER PHEMT ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency LP3000P100 • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
2	FP4050	Filtronic Compound Semiconductors	2-WATT POWER PHEMT ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz DRAIN BOND PAD SOURCE BOND PAD (2X) • DESCRIPTION AND APPLICATIONS GATE BOND PAD The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseud
3	MML09212HT1	Freescale Semiconductor	Enhancement Mode pHEMT  Low Noise Figure: 0.52 dB @ 900 MHz  Frequency: 400--1400 MHz  Unconditionally Stable Over Temperature  High Reverse Isolation: --58 dB @ 900 MHz  P1dB: 22.8 dBm @ 900 MHz  Small--Signal Gain: 37.5 dB @ 900 MHz  Third Order Output Intercept P
4	LP6836SOT343	Filtronic Compound Semiconductors	PACKAGED MEDIUM POWER PHEMT ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high elec
5	LP750P100	Filtronic Compound Semiconductors	PACKAGED 0.5 WATT POWER PHEMT ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenid
6	LPA6836V	Filtronic Compound Semiconductors	MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP
7	FP100	Filtronic Compound Semiconductors	HIGH PERFORMANCE PHEMT ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz • DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The
8	FP1510SOT89	Filtronic Compound Semiconductors	LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • DESCRIPTION AND APPLICATIO
9	1702	Telcom Semiconductor	5 Femtoampere Bias Current Operational Amplifier
10	MML20211HT1	Freescale Semiconductor	Enhancement Mode pHEMT  Ultra Low Noise Figure: 0.65 dB @ 2140 MHz  Frequency: 1400--2800 MHz  High Reverse Isolation: --35 dB @ 2140 MHz  P1dB: 21.3 dBm @ 2140 MHz  Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)  Third Order Output Intercept Point: 3
11	MML09211HT1	Freescale Semiconductor	Enhancement Mode pHEMT  Ultra Low Noise Figure: 0.52 dB @ 900 MHz  Frequency: 400--1400 MHz  Unconditionally Stable over Temperature  High Reverse Isolation: --35 dB @ 900 MHz  P1dB: 22 dBm @ 900 MHz  Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)  Th
12	LP7512	Filtronic Compound Semiconductors	ULTRA LOW NOISE PHEMT ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (
13	LPD200MX	Filtronic Compound Semiconductors	HIGH PERFORMANCE PHEMT ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency LPD200MX • DESCRIPTION AND APPLICATIONS The LPD200 is an
14	LPD200P70	Filtronic Compound Semiconductors	PACKAGED HIGH DYNAMIC RANGE PHEMT ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.8 dB Noise Figure at 2 GHz LPD200P70 • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / In
15	LP1500	Filtronic Compound Semiconductors	1W POWER PHEMT ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) GATE BOND PAD (2X)
16	LPA6836V	Filtronic Compound Semiconductors	MEDIUM POWER PHEMT WITH SOURCE VIAS ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD • DESCRIPTION AND AP
17	CFY77-08	Siemens Semiconductor Group	AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 C
18	MRFG35010AR1	Freescale Semiconductor	Gallium Arsenide PHEMT RF Power Field Effect Transistor Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 15 -5 33 - 65 to +175 175 - 40 to +90 Unit Vdc Vdc dBm °C °C °C Operating Case Temperature Range
19	TQP13-N	TriQuint Semiconductor	0.13 um D pHEMT Foundry Service 0.13 um pHEMT (TQP13-N) Process Cross-section • • • • • • Low cost Optical Lithography 0.13um Gate High Ft, ~95 GHz TQP13-N Low Noise, < 0.5 dB in Ku-band Interconnects: 2 layers (1 Airbridge & 1 local) High Value MIM Capacitor Resistors • Thin fil
20	MMG20271H9T1	Freescale Semiconductor	pHEMT  Frequency: 1500--2700 MHz  Noise Figure: 1.7 dB @ 2140 MHz  P1dB: 27.5 dBm @ 2140 MHz  Small--Signal Gain: 16 dB @ 2140 MHz  Third Order Output Intercept Point: 43.1 dBm @ 2140 MHz  Class 2 HBM ESD Immunity  Single 5 V Supply  Supply Current