MRFG35010AR1 Freescale Semiconductor Gallium Arsenide PHEMT RF Power Field Effect Transistor Datasheet. existencias, precio

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MRFG35010AR1

Freescale Semiconductor
MRFG35010AR1
MRFG35010AR1 MRFG35010AR1
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Part Number MRFG35010AR1
Manufacturer Freescale Semiconductor
Description 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resi...
Features Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 15 -5 33 - 65 to +175 175 - 40 to +90 Unit Vdc Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Case Temperature 79°C, 1 W CW Class AB Class A Symbol RθJC Value (1, 2) 4.0 4.1 Unit °C/W 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of R...

Document Datasheet MRFG35010AR1 Data Sheet
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