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ON Semiconductor |
Green Mode Power Switch include: a fixed oscillator with frequency modulation for reduced EMI, Under Voltage Lock Out (UVLO) protection, Leading Edge Blanking (LEB), an optimized gate turn−on/turn−off driver, Thermal Shut Down (TSD) protection, Abnormal Over Current Protect |
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Fairchild Semiconductor |
POWER RECTIFIER * Ultrafast with Soft Recovery (Trr < 40ns) * Low Forward Voltage (V F=0.98V at IF=30A) POWER RECTIFIER TO-3P APPLICATIONS * Power Switching Circuits * Output rectifiers * Freewheeling Diodes * Switching Mode Power Supply 1 2 3 1 2 3 MAXIMUM R |
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Inchange Semiconductor |
Thyristors er voltage VD =12V;IT=0.1A; MAX 0.01 0.5 2.0 1.6 10 10 10 1.3 UNIT mA V mA V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl |
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Toshiba Semiconductor |
Diode Silicon Epitaxial Schottky Barrier Type 1-2S1C JEDEC JEITA TOSHIBA Weight:0.0024g(typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition Min ⎯ 25 ⎯ ⎯ Typ. 0. |
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ON Semiconductor |
Zener Protection Diode • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • 175°C TJ(MAX) – Rated for High Temperature, Mission Critical Applications • SZ Prefix for Automotive and Other Applications Requir |
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Fairchild Semiconductor |
Diodes |
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Fairchild Semiconductor |
(FSDH321 / FSDL321) Green Mode Fairchild Power Switch • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction • Precision Fixed Operating Frequency • Internal Start-up Circuit • Pulse-by-Pulse Current L |
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Toshiba Semiconductor |
Diode Silicon Epitaxial Schottky Barrier Type rt and estimated failure rate, etc). VESM JEDEC JEITA TOSHIBA 0.5±0.05 V ― ― 1-2S1C Weight:0.0015g(typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 m |
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National Semiconductor |
quad PNP core driver |
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National Semiconductor |
quad NPN core driver |
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ON Semiconductor |
N-Channel MOSFET • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • These Devices are Pb−Free and are RoHS Compliant Applications • Syn |
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ON Semiconductor |
Green Mode Power Switch include: a fixed oscillator with frequency modulation for reduced EMI, Under Voltage Lock Out (UVLO) protection, Leading Edge Blanking (LEB), an optimized gate turn−on/turn−off driver, Thermal Shut Down (TSD) protection, Abnormal Over Current Protect |
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ON Semiconductor |
Zener Protection Diode • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • 175°C TJ(MAX) – Rated for High Temperature, Mission Critical Applications • SZ Prefix for Automotive and Other Applications Requir |
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ON Semiconductor |
Zener Protection Diode • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • 175°C TJ(MAX) – Rated for High Temperature, Mission Critical Applications • SZ Prefix for Automotive and Other Applications Requir |
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ON Semiconductor |
Zener Protection Diode • Precise Clamping Voltage • High ESD Ratings • Wettable Flank Package for optimal Automated Optical Inspection (AOI) • 175°C TJ(MAX) – Rated for High Temperature, Mission Critical Applications • SZ Prefix for Automotive and Other Applications Requir |
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ON Semiconductor |
Low-Leakage Diode tal Device Dissipation Derate Above 25°C RqJA Thermal Resistance, Junction to Ambient Value 500 3.33 300 Units mW mW/°C °C DATA SHEET www.onsemi.com Cathode Band AXIAL LEAD (DO−35) CASE 017AG Cathode is denoted with a black band MiniMELF / SOD |
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Taiwan Semiconductor |
650V SiC Merged PIN Schottky Diode ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant |
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Potens semiconductor |
N-Channel MOSFETs 30V, 200A, RDS(ON) =2.1mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications MB / VGA / Server Vcore POL Applications SMPS 2nd SR BMS System Absolute Maximum Ratings Tc=25℃ un |
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Potens semiconductor |
N-Channel MOSFETs 30V, 176A, RDS(ON) =3mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted |
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Fairchild Semiconductor |
Diode ommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress rat |
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Desde 2024. D4U Semiconductor.
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