| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and |
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Fairchild Semiconductor |
400V N-Channel MOSFET /+,&&81 9 : ) 9 '! ; '! *!'! ; 9 = * !!5 9 /+6781 |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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Fairchild Semiconductor |
HGTG30N60B3D of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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ON Semiconductor |
Power MOSFET • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available* Applications • PWM Motor Controls • Power Supplies • |
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Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT |
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ON Semiconductor |
Schottky Barrier Diode • Very Low Forward Voltage Drop − 370 mV @ 10 mA • Low Reverse Current − 7.0 mA @ 10 V VR • 100 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C • Very High Switching Speed • Low Capacitan |
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ON Semiconductor |
Schottky Barrier Diode http://onsemi.com 30 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE • • • • • • • • • • • • • • • • • • • Very Low Forward Voltage Drop − 400 mV @ 10 mA Low Reverse Current − 0.2 mA @ 10 V VR 100 mA of Continuous Forward Current ESD Rating − Human Bo |
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Fairchild Semiconductor |
SMPS Series N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i |
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ON Semiconductor |
SMPS IGBT of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has |
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Cypress Semiconductor |
32-bit Microcontroller 32-bit ARM Cortex-M3 Core Processor version: r2p1 Up to 20 MHz Operation Frequency Integrated Nested Vectored Interrupt Controller (NVIC): 1 channel NMI (non-maskable interrupt) and 32 channels' peripheral interrupts and 8 priority levels 24-bit Syst |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.075Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS( |
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ON Semiconductor |
IGBT a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching |
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ON Semiconductor |
SiC MOSFET • Typ. RDS(on) = 29 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 107 nC) • High Speed Switching with Low Capacitance (Coss = 106 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on seco |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
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ON Semiconductor |
Power MOSFET • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Param |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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Fairchild Semiconductor |
600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . |
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ON Semiconductor |
Schottky Barrier Diode • Low Forward Voltage Drop − 400 mV @ 500 mA • Low Reverse Current − 15 mA @ 10 V VR • 500 mA of Continuous Forward Current • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C • High Switching Speed • These Devices are Pb−Fr |
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Desde 2024. D4U Semiconductor.
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