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30N06 |
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| Part Number | 30N06 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 105 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT ... |
| Document |
 30N06 Data Sheet
PDF 281.66KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET |
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| 2 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET |
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| 3 | 30N06-Q |
Unisonic Technologies |
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| 4 | 30N06G |
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| 5 | 30N06L |
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| 6 | 30N06V-Q |
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|
Desde 2024. D4U Semiconductor.
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