ON Semiconductor 2N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N5551	ON Semiconductor	NPN Amplifier • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit VCEO Collector−Emitter Voltage 160 V VCBO Collector−Base Voltage 180 V VEBO Emitter−Base Voltage 6 V
2	12N50	Inchange Semiconductor	N-Channel Mosfet Transistor ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switc
3	2N5401	ON Semiconductor	Amplifier Transistor • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VE
4	2N5551	Fairchild Semiconductor	NPN General Purpose Amplifier operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, Tstg(2) Collector-Emitter Voltage Colle
5	2N5060	ON Semiconductor	Sensitive Gate Silicon Controlled Rectifiers • Sensitive Gate Trigger Current − 200 mA Maximum • Low Reverse and Forward Blocking Current − 50 mA Maximum, TC = 110°C • Low Holding Current − 5 mA Maximum • Passivated Surface for Reliability and Uniformity • These are Pb−Free Devices MAXIMUM
6	2N5484	Fairchild Semiconductor	N-Channel RF Amplifier e Power Franchise® CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™
7	2N5629	Central Semiconductor Corp	COMPLEMENTARY SILICON POWER TRANSISTORS
8	2N5401	Inchange Semiconductor	Silicon PNP Power Transistor Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitte
9	2N5333	Central Semiconductor	PNP SILICON POWER TRANSISTOR
10	12N50FT	Fairchild Semiconductor	FDPF12N50FT • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field eff
11	2N5086	Fairchild Semiconductor	PNP General Purpose Amplifier Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage
12	2N5301	ON Semiconductor	POWER TRANSISTORS ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
13	2N5302	ON Semiconductor	POWER TRANSISTORS http://onsemi.com • Low Collector−Emitter Saturation Voltage − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
14	2N5303	ON Semiconductor	POWER TRANSISTORS ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
15	2N5461	ON Semiconductor	P-CHANNEL JFET • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain − Gate Voltage Reverse Gate − Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symb
16	2N5486	Fairchild Semiconductor	N-Channel RF Amplifier e Power Franchise® CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™
17	2N5550	ON Semiconductor	Amplifier Transistor • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Symbol 2N5550 2N5551 VCEO Value 140 160 Unit Vdc Collector − Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter − Base Voltage Collector Current − Continu
18	2N5883	ON Semiconductor	Complementary Silicon High-Power Transistors http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Ba
19	2N5876	Central Semiconductor Corporation	Transistor
20	2N5039	Inchange Semiconductor	(2N5038 / 2N5039) Silicon NPN Power Transistors PN Power Transistors 2N5038 2N5039 CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage 2N5038 IC=0.2A ;IB=0 2N5039 2N5038 2N5039 IC=12A ;IB=1.2A 1.0 IC=10A ;IB=1A IC=20A ;IB=5A IC=20A ;IB=5A IC=12A ; VC