| Part Number | 2N5401 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | Bipolar Transistors - BJT BJT, TO-92, 150V, 600mA, PNP |
| Description | 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VE... |
| Features |
• These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 150 Vdc 160 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Ju... |
| Document |
 2N5401 datasheet pdf (116.78KB)
|
| Distributor |
Mouser Electronics All other distributors |
| Stock | 9969 In Stock |
| Price | 1 units: 0.13 USD 10 units: 0.097 USD 100 units: 0.081 USD 500 units: 0.065 USD 1000 units: 0.056 USD 4000 units: 0.043 USD 8000 units: 0.027 USD 48000 units: 0.023 USD
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| BuyNow |
 Buy Now (Manufacturer a Diotec Semiconductor AG 2N5401) |
| Part Number | 2N5401 |
| Manufacturer | Philips |
| Title | PNP high-voltage transistors |
| Description | PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N5551. PINNING PIN 1 2 3 collector base emitter DES. |
| Features |
• Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications. DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N5551. PINNING PIN 1 2 3 collector base emitter DES. |
| Document | 2N5401 datasheet pdf |
| Part Number | 2N5401 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | 2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP General Purpose Amplifier This. |
| Features |
eristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5401 625 5.0 83.3 200
Max
*MMBT5401 350 2.8 357
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
. |
| Document | 2N5401 datasheet pdf |
| Part Number | 2N5401 |
| Manufacturer | Motorola |
| Title | AMPLIFIER TRANSISTOR |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM. |
| Features |
. |
| Document | 2N5401 datasheet pdf |
| Part Number | 2N5401 |
| Manufacturer | Multicomp |
| Title | Bipolar Transistor |
| Description | A negative 3-terminal voltage regulator in a TO-92 type package suitable for numerous applications requiring up to 100mA. This device features th. |
| Features |
• No External Components Required • Internal Short-Circuit Current Limiting • Internal Thermal Overload Protection Emitter 3 2 Base 1 Collector Description: A negative 3-terminal voltage regulator in a TO-92 type package suitable for numerous applications requiring up to 100mA. This device fea. |
| Document | 2N5401 datasheet pdf |
| Part Number | 2N5401 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5551. isc Product Specification 2N5401 APPL. |
| Features |
Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain
IC= 10mA; IB. |
| Document | 2N5401 datasheet pdf |
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