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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switch regulators ·Switc |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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Inchange Semiconductor |
N-Channel Mosfet Transistor sc Product Specification 18N50 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance |
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Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET Dual N-Channel，5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSP018N03MD 30V/30A Dual N-Channel Advanced Power MOSFET V DS R DS(on |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD018N08HS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 80 V |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • PDP TV • Uninterruptible Power Supply • AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fair |
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Comset Semiconductors |
PNP Silicon Transistor Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCEX(SUS) VCER(SUS) Ratings Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Test Condit |
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ON Semiconductor |
Power MOSFET http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 51 mW N−Channel D ID MAX 18 A • Pb−Free Packages are Available Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S Value 60 60 "20 "30 18 10 54 55 0.36 2.1 − |
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Fairchild Semiconductor |
500V N-Channel MOSFET • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect |
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Fairchild Semiconductor |
N-Channel UniFETTM FRFET MOSFET • RDS(on) = 120 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power S |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE |
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ON Semiconductor |
N-Channel MOSFET • RDS(on) = 129 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • LCD/LED TV • Consumer Appliances • Lighting • Uninterruptible P |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VST018N10HS 100V/60A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 100 |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semicond |
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ON Semiconductor |
Power MOSFET Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 "10 "20 15 8.0 45 48.4 0.32 −55 to +175 61 Adc Adc Apk Watts W/°C °C mJ Unit Vdc Vdc Vdc 4 4 1 TO−220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418AA |
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Westcode Semiconductor |
1200-2000 Phase Control Thyristor 60-220 N3533ZC140-200 N4085ZC080-120 1200-1600 1200-1600 1200-1600 1200-1600 1200-1600 2000-2400 1200-1800 1200-1600 1200-1600 200-600 5800-6500 4000-4500 3800-4200 3000-3600 2000-2600 1200-1800 1200-1800 1200-1800 4000-4500 3000-3800 3000-3600 2000- |
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Fairchild Semiconductor |
HGTG18N120BN of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh |
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ON Semiconductor |
Power MOSFET 1 A, L = 1.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, (1/8″ from case for 10 s) EAS 61 mJ RqJC RqJA TL °C/W 3.1 72.5 260 °C Maximum ratings are those values beyon |
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Desde 2024. D4U Semiconductor.
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