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TSM018NA03CR |
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| Part Number | TSM018NA03CR |
| Manufacturer | Taiwan Semiconductor |
| Description | TSM018NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 185A, 1.8mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● C... |
| Features |
● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 1.8 2.4 28 V mΩ nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switching PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-S... |
| Document |
 TSM018NA03CR Data Sheet
PDF 284.68KB |
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Desde 2024. D4U Semiconductor.
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