PFV218N50 |
Part Number | PFV218N50 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode p... |
Document |
PFV218N50 Data Sheet
PDF 1.18MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PFV |
Rubycon |
CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS | |
2 | PF0010 |
Renesas Technology |
High Frequency Power MOS FET Module | |
3 | PF00105A |
Hitachi Semiconductor |
MOS FET Power Amplifier Module for AMPS Handy Phone | |
4 | PF0027 |
Renesas Technology |
MOS FET Power Amplifier Module | |
5 | PF0030 |
Hitachi Semiconductor |
MOS FET Power Amplifier | |
6 | PF0031 |
Hitachi |
MOS FET Power Amplifier Module |