| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
NPT IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NP |
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NTE Electronics |
Integrated Circuit TV Horizontal/Vertical Countdown Digital Sync System D Automatic Forced Asynchronous Mode to Remove Jitter D Improved Low Voltage Start –Up Operation D Lower Zero –State Horizontal –Drive Pulse Output D Improved Symmetry for Horizontal –Drive Output D Improved Automatic Standard Operation D Noise Detector |
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Fairchild Semiconductor |
1200V NPT Trench IGBT • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25°C • Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25°C • Extremely enhanced avalanche capability tm Descript |
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Fairchild Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Application UPS, Welder, Induction Heating, Microwave Oven C GCE TO-3P Absolute Maximum Ratings TC = 25C unless |
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ON Semiconductor |
Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS 30 V RDS(on) |
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ON Semiconductor |
Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK • • • • • Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V |
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ON Semiconductor |
NPT Trench IGBT • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applicat |
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AllegroMicroSystems |
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS I TTL, DTL, PMOS, or CMOS-Compatible Inputs I Output Current to 500 mA I Output Voltage to 95 V I Transient-Protected Outputs I Dual In-Line Plastic Package or Small-Outline IC Package x = digit to identify specific device. Characteristic shown appl |
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ON |
Power MOSFET http://onsemi.com VDSS 60 V RDS(ON) TYP 23.7 mW N−Channel D ID MAX 32 A • • • • • • • • • Smaller Package than MTB30N06VL Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery S |
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ON Semiconductor |
N-Channel DPAK http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 26 mW N−Channel D ID MAX 32 A • • • • • • • • • • • • Pb−Free Packages are Available Smaller Package than MTB36N06V Lower RDS(on) Lower VDS(on) Lower Total Gate Charge Lower and Tighter VSD Lower Diode Re |
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Alliance Semiconductor Corporation |
3.3V 128Kx18 Pipelined SRAM • Organization: 131,072 words × 18 bits • NTD™ architecture for efficient bus operation • Fast clock speeds to 200 MHz • Fast clock to data access: 3.0/3.5/4.0 ns • Fast OE access time: 3.0/3.5/4.0 ns • Fully synchronous operation • Asynchronous outp |
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ON Semiconductor |
Power MOSFET • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery |
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ON Semiconductor |
Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices V(BR)DSS 30 V http://onsemi.com RDS(ON) |
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EDI |
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS s AMBIENT TEMPERATURE % RATED FWD CURRENT 100 75 50 25 0 0 25 50 75 100 (OC) 125 150 AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS 0.1SEC 100 1.0SEC % MAXIMUM SURGE 75 50 25 www.DataSheet4U.com 0 1 2 3 4 5 6 7 8 9 10 20 |
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ON Semiconductor |
Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices ar |
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Naina Semiconductor |
Thyristor-Diode • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package 100 100NTD Maximum Ratings (TA = 250C unless otherwise n |
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ON Semiconductor |
Power MOSFET http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 51 mW N−Channel D ID MAX 18 A • Pb−Free Packages are Available Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits G S Value 60 60 "20 "30 18 10 54 55 0.36 2.1 − |
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Naina Semiconductor |
Thyristor/Diode Module Thyristor/Diode Module, 156A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type numb |
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Desde 2024. D4U Semiconductor.
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