Numonyx M29 Hoja de datos

No.	parte #	Fabricante	Descripción
1	M29F800FB	Numonyx	(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block
2	M29W128GH	Numonyx	128 Mbit 3V Supply Flash Memory Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30 ns – Random access:
3	M29F160FT	Numonyx	(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block
4	M29F400FB	Numonyx	(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block
5	M29W400DB	Numonyx	3V supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read Access time: 45, 55, 70 ns Programming time – 10 μs per byte/word typical 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks Program/Era
6	M29W064FT	Numonyx	64-Mbit 3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60, 70 ns Programming time – 10 μs per byte/word ty
7	M29W640FT	Numonyx	64M 3V Supply Flash Memory summary Supply voltage VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read Page Width: 4 Words Page Access: 25ns Random Access: 60ns, 70ns Programming time 10 s per Byte/Word typ
8	M29W400FT	Numonyx	4-Mbit Boot Block 3 V Supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns Programming time – 10 µs per byte/word typical 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main bloc
9	JS28F00AM29EWHx	Numonyx	3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
10	JS28F00AM29EWLx	Numonyx	3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
11	M29W800FT	Numonyx	8-Mbit Boot Block 3 V Supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns Programming time – 10 µs per byte/word typical 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main bloc
12	M29W400DT	Numonyx	3V supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read Access time: 45, 55, 70 ns Programming time – 10 μs per byte/word typical 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks Program/Era
13	M29W800DT	Numonyx	3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/e
14	M29W800DB	Numonyx	3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/e
15	M29W640FB	Numonyx	64M 3V Supply Flash Memory summary Supply voltage VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read Page Width: 4 Words Page Access: 25ns Random Access: 60ns, 70ns Programming time 10 s per Byte/Word typ
16	M29W160ET	Numonyx	16 Mbit 3V Supply Flash Memory SUMMARY ■ SUPPLY VOLTAGE www.DataSheet4U.com – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical ■ 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main
17	M29W128FH	Numonyx	128 Mbit 3V Supply Flash Memory summary ■ Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Asynchronous Random/Page Read – Page Width: 8 Words/16 Bytes – Page Access: 25, 30ns – Random Access: 60, 70ns Programming time – 10µs pe
18	JS28F512M29EWHx	Numonyx	3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
19	JS28F256M29EWHx	Numonyx	3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);
20	JS28F256M29EWLx	Numonyx	3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA);