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M29W800DT |
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| Part Number | M29W800DT |
| Manufacturer | Numonyx |
| Title | 3V supply flash memory |
| Features |
Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/erase controller – Embedded byte/word program algor... |
| Document |
 M29W800DT Data Sheet
PDF 748.08KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M29W800D |
ST Microelectronics |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory |
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| 2 | M29W800DB |
Numonyx |
3V supply flash memory |
|
| 3 | M29W800DB |
ST Microelectronics |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory |
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| 4 | M29W800DT |
ST Microelectronics |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory |
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| 5 | M29W800AB |
ST Microelectronics |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
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| 6 | M29W800AT |
ST Microelectronics |
8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
Desde 2024. D4U Semiconductor.
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