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JS28F00AM29EWHx |
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| Part Number | JS28F00AM29EWHx |
| Manufacturer | Numonyx |
| Description | ..... 7 Signal Descriptions... . . . . ... |
| Features |
Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization — Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller — Embedded byte/word program algorithms Program/ Erase Suspend and Resume — Read from any block during Pr... |
| Document |
 JS28F00AM29EWHx Data Sheet
PDF 2.20MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | JS28F00AM29EW |
MICRON |
Parallel NOR Flash Embedded Memory |
|
| 2 | JS28F00AM29EWLx |
Numonyx |
3 V supply flash memory |
|
| 3 | JS28F00AP30BFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory |
|
| 4 | JS28F00AP30BFx |
MICRON |
Micron Parallel NOR Flash Embedded Memory |
|
| 5 | JS28F00AP30BTFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory |
|
| 6 | JS28F00AP30EFA |
MICRON |
Micron Parallel NOR Flash Embedded Memory |
|
Desde 2024. D4U Semiconductor.
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