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NXP |
Dual P-channel enhancement mode MOS transistor • High-speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor driver • Power management • DC-DC converters • General purpose switching. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plas |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP44N06LT, PHB44N06LT, PHD44N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = |
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NXP |
PowerMOS transistor Isolated version of PHP4N50E ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP45N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 45 A g RDS(ON) ≤ 24 mΩ |
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NXP |
PowerMOS transistor Isolated version of PHP4N40E ce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 |
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NXP Semiconductors |
PHP54N06T and benefits Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quic |
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NXP |
P-channel enhancement mode MOS transistor • Very low RDSon • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • General purpose switch. DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT |
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NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic en |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP60N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
PowerMOS transistor Isolated version of PHP2N40E rce voltage Drain current (DC) Drain current (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 10 |
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NXP |
PowerMOS transistor age temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 22 15 88 75 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistanc |
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NXP |
Dual P-channel enhancement mode MOS transistor • Very low on-state resistance • High-speed switching • No secondary breakdown • Low threshold. APPLICATIONS • Power management • DC-DC converters • General purpose switch. DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin SOT96- |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP24N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
PowerMOS transistor Logic level FET • ’Trench’ technology • Low on-state resistance • Fast switching SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 10.3 A g RDS(ON) ≤ 150 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic en |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP37N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP50N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
PowerMOS transistor (pulse peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP65N06LT, PHB65N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 63 A g s RD |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP6N60E, PHB6N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 5.4 A RDS(ON) ≤ 1.8 Ω s GENERAL DES |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHP80N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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Desde 2024. D4U Semiconductor.
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