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54N06T |
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| Part Number | 54N06T |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, co... |
| Features |
Low conduction losses due to low on-state resistance
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1 and 3
-
-
55 V
-
-
54 A
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
118 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 40 A;
VDS = 44 V; Tj = 25... |
| Document |
 54N06T Data Sheet
PDF 196.78KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 5400 |
National Semiconductor |
Quad 2-Input NAND Gates |
|
| 2 | 5402 |
National Semiconductor |
Quad 2-Input NOR Gates |
|
| 3 | 5404 |
National Semiconductor |
Hex Inverting Gates |
|
| 4 | 5404DMQB |
National Semiconductor |
Hex Inverting Gates |
|
| 5 | 5404FMQB |
National Semiconductor |
Hex Inverting Gates |
|
| 6 | 5406 |
Texas Instruments |
HEX INVERTER BUFFERS/DRIVERS |
|
Desde 2024. D4U Semiconductor.
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