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NXP |
PHB42N03LT • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Surface mounting package PHB42N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID |
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NXP |
TrenchMOS logic level FET s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC convertors 4. Pinning information Table 1: Pinning - SOT404, SOT428 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb |
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NXP |
N-channel TrenchMOS transistor Logic level FET • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPT |
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NXP |
N-channel TrenchMOS logic level FET s Logic level threshold s Low gate charge s Low on-state resistance s Low thermal resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies. 1.4 Quick reference data s VDS ≤ 25 V s Ptot ≤ 150 W s ID ≤ 75 A s RDSon ≤ 4 mΩ. 2 |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB24N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
N-channel TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level compatible PHP50N03LT, PHB50N03LT PHD50N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 48 A RDS(ON |
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NXP |
N-Channel Transistor • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 200 V ID = 8.7 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, i |
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NXP |
PHB55N03LT • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 |
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NXP |
N-channel TrenchMOS transistor Logic level FET • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA d SYMBOL VDSS = 55 V ID = 19 A RDS(ON) ≤ 75 mΩ (VGS = 5 V) RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHB21N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETE |
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NXP |
N-channel TrenchMOS transistor • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’ |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP24N03LT, PHB24N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g s RD |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N60E, PHB2N60E, PHD2N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 1.9 A RDS(ON) ≤ 6 Ω s GEN |
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NXP |
PowerMOS transistor Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction t |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N60E, PHB3N60E SYMBOL d QUICK REFERENCE DATA VDSS = 600 V g ID = 2.8 A RDS(ON) ≤ 4.4 Ω s GENERAL DES |
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NXP |
N-Channel Transistor s Logic level threshold s Low on-state resistance. 1.3 Applications s DC-to-DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 25 V s RDSon ≤ 10.5 mΩ s ID ≤ 66 A s Qgd = 3.6 nC (typ). 2. Pinning information Table 1: Di |
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NXP |
MOSFET s Logic level compatible s Low gate charge 1.3 Applications s DC to DC converters s Switched mode power supplies 1.4 Quick reference data s VDS = 30 V s Ptot = 136 W s ID = 75 A s RDSon ≤ 8 mΩ 2. Pinning information Table 1: 1 2 3 mb Pinning - SOT |
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NXP |
N-Channel MOSFET • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP87N03LT, PHB87N03LT PHD87N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 75 A RDS(ON) ≤ 9.5 mΩ (VGS = 10 V) RDS(ON) ≤ 1 |
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NXP |
N-Channel Transistor s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters c c 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) |
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NXP |
N-Channel MOSFET s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Descripti |
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Desde 2024. D4U Semiconductor.
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