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PHB36N06E |
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| Part Number | PHB36N06E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching appli... |
| Features |
Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.2 UNIT K/W K/W
August 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHB36N06E
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltag... |
| Document |
 PHB36N06E Data Sheet
PDF 55.07KB |
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