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PHB21N06T |
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| Part Number | PHB21N06T |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance ... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB21N06T
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 21 69 175 75 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maxim... |
| Document |
 PHB21N06T Data Sheet
PDF 69.23KB |
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