| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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NXP |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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NXP |
P-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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NXP |
128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
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NXP |
P-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.78 × 0.78 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Swit |
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NXP |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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NXP |
N-channel Trench MOSFET and benefits • Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switch |
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Desde 2024. D4U Semiconductor.
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