Busque con el número de pieza junto con el fabricante o la descripción
PMCM650VNE |
Click to view a larger image
| Part Number | PMCM650VNE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm... |
| Features |
• Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 12 V -8 - 8V [1] - - 8.... |
| Document |
 PMCM650VNE Data Sheet
PDF 366.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PMCM6501UNE |
nexperia |
N-channel Trench MOSFET |
|
| 2 | PMCM6501UPE |
nexperia |
P-channel Trench MOSFET |
|
| 3 | PMCM6501VNE |
NXP |
N-channel Trench MOSFET |
|
| 4 | PMCM6501VNE |
nexperia |
N-channel MOSFET |
|
| 5 | PMCM6501VPE |
NXP |
P-channel Trench MOSFET |
|
| 6 | PMCM6501VPE |
nexperia |
P-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|