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PMCM6501VPE |
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| Part Number | PMCM6501VPE |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra sm... |
| Features |
• Low threshold voltage • Ultra small package: 0.98 × 1.48 × 0.35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -8.2 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -3.0 A; Tj = 25 ... |
| Document |
 PMCM6501VPE Data Sheet
PDF 358.11KB |
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Desde 2024. D4U Semiconductor.
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