| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NXP |
Amplifier Transistors |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
Safety power system basis chip with two fail-safe outputs, becoming a full part of a safety oriented system partitioning, to reach a high integrity safety level (up to ASIL D). The built-in CAN FD interface fulfills the ISO 11898-2(12) and -5(13) standards. The LIN interface fulf |
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NXP |
Single Wire CAN Transceiver • Waveshaping for low Electromagnetic Interference (EMI) • Detects and automatically handles loss of ground • Worst-case Sleep mode current of only 60 μA • Current limit prevents damage due to bus shorts • Built-in thermal shutdown on bus output • Pr |
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NXP |
Isolated network high-speed transceiver and benefits • 2.0 Mbit/s isolated network communication rate • Dual SPI architecture for message confirmation • Robust conducted and radiated immunity with wake-up • 3.3 V and 5.0 V compatible logic thresholds • Low sleep mode current with automati |
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NXP |
Low-dropout linear regulators and benefits Maximum output current of 1 A Wide operation range to 20 V input Output voltage accuracy of 1 % or 1.25 % Output current limiting SOA control Thermal shutdown No minimum load requirements for fixed output voltage versions |
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NXP |
Safety power system basis chip with two fail-safe outputs, becoming a full part of a safety oriented system partitioning, to reach a high integrity safety level (up to ASIL D). The built-in CAN FD interface fulfills the ISO 11898-2(12) and -5(13) standards. The LIN interface fulf |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 400 mW • Two tolerance series: ±2% and ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range). handbook, 4 columns BZX284 series DESCRIPTION Low-power voltage regulator diodes in a small ceramic SMD SOD110 package |
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NXP |
Voltage regulator diodes • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo |
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NXP |
Voltage regulator diodes • Total power dissipation: max. 300 mW • Two tolerance series: ±2% and approx. ±5% • Working voltage range: nominal 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. DESCR |
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NXP |
Advanced IGBT/SiC gate driver and benefits This section summarizes the key features, safety features, and regulatory approvals. 3.1 Key features • SPI interface for safety monitoring, programmability and flexibility • Low propagation delay and minimal PWM distortion • Integrated |
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NXP |
Voltage regulator diodes • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo |
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NXP |
NPN general purpose transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
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NXP |
Low Power Narrowband FM IF |
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NXP |
Battery cell controller • 5.0 V ≤ VPWR ≤ 30 V operation, 40 V transient • 3 to 6 cells management • 0.8 mV total cell voltage measurement error • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Synchronized cell voltage/current |
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NXP |
Safety power system basis chip with two fail-safe outputs, becoming a full part of a safety oriented system partitioning, to reach a high integrity safety level (up to ASIL D). The built-in CAN FD interface fulfills the ISO 11898-2(12) and -5(13) standards. The LIN interface fulf |
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NXP |
Battery cell controller • 5.0 V ≤ VPWR ≤ 30 V operation, 40 V transient • 3 to 6 cells management • Isolated 2.0 Mbps differential communication or 4.0 Mbps SPI • Addressable on initialization • Synchronized cell voltage/current measurement with Coulomb count • Total stack |
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NXP |
Voltage regulator diodes • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo |
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NXP |
Voltage regulator diodes • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Zener working voltage range: 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types • Available in ammo |
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Desde 2024. D4U Semiconductor.
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