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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7575-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Dra |
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NXP |
TrenchMOS transistor Logic level FET very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9506-55A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation |
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NXP |
PowerMOS transistor current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS continuous continuous Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 - 55 MAX. 30 30 15 21 15 84 |
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NXP |
TrenchMOS transistor Logic level FET very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9605-30A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation |
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NXP |
TrenchMOS transistor Logic level FET very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK9515-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation |
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NXP |
Power MOSFET Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET a |
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NXP |
Power MOSFET Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET a |
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NXP |
Power MOSFET Vertical power DMOS switch Low on-state resistance 5 V logic compatible input Overtemperature protection self resets with hysteresis Overload protection against short circuit load with output current limiting; latched - reset by input High supply vol |
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NXP |
PowerMOS transistor pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 52 36 208 150 175 175 MAX. 60 60 30 -60B 51 36 200 UNIT V V V A A A W ˚C ˚C THE |
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NXP |
TrenchMOS transistor Logic level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9775-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Dra |
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NXP |
PowerMOS transistor Logic level TOPFET Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET a |
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NXP Semiconductors |
TRENCHMOS-TM STANDARD LEVEL FET s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS( |
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NXP |
N-channel TrenchMOS FET and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V Automotive systems Automotive DC-DC converter Engi |
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NXP Semiconductors |
TrenchMOS logic level FET s Very low on-state resistance s 185 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 242 m |
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NXP Semiconductors |
N-channel TrenchMOS standard level FET and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications 12 V Automotive system |
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NXP Semiconductors |
N-Channel MOSFET and benefits AEC Q101 compliant Suitable for standard and logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V Automotive systems Electric and electro-hydraulic po |
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NXP Semiconductors |
MOSFET and benefits • • • • Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • • • • 12 V, 24 V and 48 V A |
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NXP |
N-channel TrenchPLUS logic level FET and benefits Allows responsive temperature monitoring due to integrated temperature sensor Low conduction losses due to low on-state resistance Q101 compliant 1.3 Applications 12 V and 24 V high power motor drives Automotive and general p |
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NXP |
Power MOSFET Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V input level Low threshold voltage also allows 5 V cont |
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NXP |
Power MOSFET Vertical power DMOS output stage Low on-state resistance Low operating supply current Overtemperature protection Overload protection against short circuit load with drain current limiting Latched overload protection reset by protection supply Protect |
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Desde 2024. D4U Semiconductor.
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