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BUK663R7-75C |
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| Part Number | BUK663R7-75C |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app... |
| Features |
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V Automotive systems Automotive DC-DC converter Engine management Motors, lamps and solenoid control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; se... |
| Document |
 BUK663R7-75C Data Sheet
PDF 157.05KB |
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Desde 2024. D4U Semiconductor.
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