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BUK9775-55 |
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| Part Number | BUK9775-55 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener ... |
| Features |
very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications.
BUK9775-55
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 11.7 19 150 75 UNIT V A W ˚C mΩ
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g s
case isolated
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute ... |
| Document |
 BUK9775-55 Data Sheet
PDF 68.35KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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