NXP BFG Hoja de datos

No.	parte #	Fabricante	Descripción
1	BFG541	NXP	NPN 9 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital
2	BFG540W	NXP	NPN 9 GHz wideband transistor  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones
3	BFG67	NXP	NPN 8 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTIO
4	BFG135	NXP	NPN 7GHz wideband transistor 0 transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz;  Tamb = 25 C maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;  gain Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz;  Tamb = 25 C output voltage dim = 60 dB; IC
5	BFG197	NXP	NPN 7 GHz wideband transistor • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GH
6	BFG505	NXP	NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT
7	BFG520	NXP	NPN 9GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog a
8	BFG520W	NXP	NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones
9	BFG540	NXP	NPN 9GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital
10	BFG25A	NXP	NPN 5 GHz wideband transistor • Low current consumption (100 µA to 1 mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS • RF low power amplifiers, such as pocket telephones, paging systems, with signal frequencies up to 2 GHz. DESCRIPTION NPN
11	BFG540-XR	NXP	NPN 9GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital
12	BFG540-X	NXP	NPN 9GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital
13	BFG198	NXP	NPN 8GHz wideband transistor a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector Product specification BFG198 4 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO IC Ptot hFE fT GUM
14	BFG425W	NXP	NPN 25 GHz wideband transistor  Very high power gain  Low noise figure  High transition frequency  Emitter is thermal lead  Low feedback capacitance. PINNING PIN 1 2 3 4 DESCRIPTION emitter base emitter collector APPLICATIONS  RF front end  Wideband applications, e.g. an
15	BFG505W	NXP	NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT
16	BFG65	NXP	NPN 8 Ghz Widebane Transistor
17	BFG325	NXP	NPN 14 GHz wideband transistor and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digi
18	BFG325XR	NXP Semiconductors	NPN 14 GHz wideband transistor and benefits  High power gain  Low noise figure  High transition frequency  Gold metallization ensures excellent reliability 1.3 Applications  Intended for Radio Frequency (RF) front end applications in the GHz range, such as:  analog and digi
19	BFG91A	NXP Semiconductors	NPN 6 GHZ WIDEBAND TRANSISTOR
20	BFG10	NXP	NPN 2 GHz RF power transistor • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTI