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BFG198 |
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| Part Number | BFG198 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended for wideband amplifier applications. 1 emitter fpage The device features a high gain and 2 ba... |
| Features |
a high gain and
2
base
excellent output voltage capabilities. 3
emitter
4
collector
Product specification
BFG198
4
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO IC Ptot hFE fT
GUM
Vo
collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency
maximum unilateral power gain
output voltage
open emitter open base
up to Ts = 135 C (note 1) IC = 50 mA; VCE = 5 V; Tj = 25 C IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 500 MHz; T... |
| Document |
 BFG198 Data Sheet
PDF 245.21KB |
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