Busque con el número de pieza junto con el fabricante o la descripción
BFG135 |
Click to view a larger image
| Part Number | BFG135 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure h... |
| Features |
0
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C
maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;
gain
Tamb = 25 C
IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C
output voltage
dim = 60 dB; IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz
TYP. 130 7
16
12
850
MAX. 25 15 150 1
UNIT V V mA W
GHz
dB
dB
mV
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO VCEO VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitt... |
| Document |
 BFG135 Data Sheet
PDF 269.06KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BFG135A |
Siemens Semiconductor Group |
NPN Silicon RF Transistor |
|
| 2 | BFG135A |
Infineon Technologies AG |
NPN Silicon RF Transistor |
|
| 3 | BFG10 |
NXP |
NPN 2 GHz RF power transistor |
|
| 4 | BFG10W |
NXP |
UHF power transistor |
|
| 5 | BFG10X |
NXP |
UHF power transistor |
|
| 6 | BFG11 |
NXP |
NPN 2 GHz RF power transistor |
|
Desde 2024. D4U Semiconductor.
|