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| Part Number | BFG135A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BFG135A |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon RF Transistor |
| Description | BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz 3 2 1 VPS05163 ESD: . |
| Features | ectrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 100 mA, VCE = 8 V hFE 80 120 250 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 15 V S. |
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