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BFG135A |
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| Part Number | BFG135A |
| Manufacturer | Siemens Semiconductor Group |
| Description | BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifi... |
| Features |
or Group
1
Dec-16-1996
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 120 -
V µA 100 nA 50 µA 1 80 250
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 100 mA, VCE = 8 V
Semiconductor Group
2
Dec-16-1996
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Pa... |
| Document |
 BFG135A Data Sheet
PDF 49.65KB |
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