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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fas |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft R |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra- |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 150 °C Square RBSOA 100% of the parts tested for clamped inductive load Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free |
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NTE |
Fast Switching Plastic Rectifier D Superectifier Structure for High Reliability Condition D Fast Switching for High Efficiency D Low Leakage Current, Typical IR less than 0.1A D High Forward Surge Capability Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Max. |
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ZOWIE |
SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction * Capable of meeting environmental standards of MIL-S-19500 * For use in high frequence rectifier circuits * Fast switching for high efficiency * 3.0 Amperes oper |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra- |
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TAITRON Components Incorporated |
(RGP30x) 3.0A Sintered Glass Passivated Fast Recovery Rectifier • Sintered www.DataSheet4U.com • • • • • glass passivated (SGP) rectifier chip Capable of meeting environmental standards of MIL-S-19500 For use in high frequence rectifier circuits Fast switching for high efficiency Typical IR less than 0.1uA High t |
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International Rectifier |
PDP TRENCH IGBT l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package www |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Tight parameter distribut |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Par |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Low V CE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching fr |
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International Rectifier |
Insulated Gate Bipolar Transistor Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Base part number IRGP4740DPbF IRGP4740D-EPbF Absolute Maximum Ratings Paramet |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR C • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 μS short circuit SOA • Square RBSOA G • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft R |
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International Rectifier |
WARP2 SERIES IGBT • Low VCE(ON) NPT Technology, Positive Temperature Coefficient • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Automotive Qualif |
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International Rectifier |
WARP2 SERIES IGBT • Low VCE(ON) NPT Technology, Positive Temperature Coefficient • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Lead-Free, RoHS Compliant • Automotive Qualif |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitt |
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International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP479 |
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Desde 2024. D4U Semiconductor.
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