| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 100V, rDS(ON) = 0.230Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET • 4A, 250V, rDS(ON) = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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SeCoS |
N-Channel Super Junction Power MOSFET Advanced Super Junction Technology Super Low Gate Charge Green Device Available MARKING 30N60H = Date Code ORDER INFORMATION Part Number Type SSR30N60H-C Lead (Pb)-free and Halogen-free Gate Drain Source REF. A B C D E |
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Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET • 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET • 11A, 100V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
24A/ 200V/ 0.110 Ohm/ Rad Hard/ N-Channel Power MOSFET • 24A, 200V, rDS(ON) = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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International Rectifier |
P-CHANNEL POWER MOSFET 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Surface Mount Light Weight ESD Rating: Class 1C per MIL-STD-750, Meth |
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International Rectifier |
N-CHANNEL MOSFET n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute M |
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natlinear |
30V P-Channel Enhancement Mode MOSFET VDS =-30V，ID =-6A RDS(ON)(Typ.)=66mΩ @VGS=-10V RDS(ON)(Typ.)=96mΩ @VGS=-4.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment SOP-8 Application Battery protection L |
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Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode nnel - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S |
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Infineon Technologies AG |
Silicon N-Channel MOSFET Tetrode ctrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 G |
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Intersil Corporation |
23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFET • 23A, 200V, rDS(ON) = 0.115Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 12nA Per-RAD(Si)/s Typically |
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International Rectifier |
TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Aval |
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Intersil Corporation |
8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET • 8A, 200V, rDS(ON) = 0.440Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V O |
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Intersil Corporation |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET • 22A, -100V, rDS(ON) = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET • 25A (Note), 100V, rDS(ON) = 0.070Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS |
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Cornell Dubilier Electronics |
Solid Tantalum Capacitors mit At +125 ºC – 12.5 x ratings limit –10% @ –55ºC +8% @ +85 ºC +12% @ +125 ºC Case Code A B C D Watts 0.090 0.100 0.125 0.180 Maximum Power Dissipation @ +25 ºC: Case Sizes Uninsulated Case Code A B C D D ±.005 (±.13) .125 (3.18) .175 (4.45) .279 |
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Intersil Corporation |
N-Channel Power MOSFETs |
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Intersil Corporation |
N-Channel Power MOSFETs |
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Desde 2024. D4U Semiconductor.
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