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JANSR2N7399 |
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| Part Number | JANSR2N7399 |
| Manufacturer | Intersil Corporation |
| Description | The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET... |
| Features |
• 11A, 100V, rDS(ON) = 0.210Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.5nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7399 PACKAGE T0-257AA Also available at oth... |
| Document |
 JANSR2N7399 Data Sheet
PDF 44.09KB |
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| 6 | JANSR2N7396 |
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Desde 2024. D4U Semiconductor.
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