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JANSR2N7390U |
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| Part Number | JANSR2N7390U |
| Manufacturer | International Rectifier |
| Description | IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power loss. |
| Features |
Single Event E. |
| Datasheet |
 JANSR2N7390U Data Sheet
PDF 343.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | JANSR2N7390 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
|
| 2 | JANSR2N7391 |
International Rectifier |
N-CHANNEL MOSFET |
|
| 3 | JANSR2N7392 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 4 | JANSR2N7395 |
Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 5 | JANSR2N7396 |
Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 6 | JANSR2N7397 |
Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 7 | JANSR2N7398 |
Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 8 | JANSR2N7399 |
Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 9 | JANSR2N7389 |
International Rectifier |
TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) |
|
| 10 | JANSR2N7261 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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