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JANSR2N7391 |
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| Part Number | JANSR2N7391 |
| Manufacturer | International Rectifier |
| Description | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) PD-91224E IRHM7360SE JANSR2N7391 400V, N-CHANNEL REF:MIL-PRF-19500/661 RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM7360SE 100K Rads (Si) 0.20Ω ID QPL Part Number 22A JANSR2N7391 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performa. |
| Features | n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 22 14 A 88 250 W 2.0 W/°C VGS Gate-to-Source Voltage ±20 EAS Single Pulse Avalanche Energ. |
| Datasheet |
 JANSR2N7391 Data Sheet
PDF 166.61KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | JANSR2N7390 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
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| 2 | JANSR2N7390U |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
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| 3 | JANSR2N7392 |
International Rectifier |
Radiation Hardened Power MOSFET |
|
| 4 | JANSR2N7395 |
Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 5 | JANSR2N7396 |
Intersil Corporation |
5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 6 | JANSR2N7397 |
Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET |
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| 7 | JANSR2N7398 |
Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET |
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| 8 | JANSR2N7399 |
Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET |
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| 9 | JANSR2N7389 |
International Rectifier |
TRANSISTOR P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-6.5A) |
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| 10 | JANSR2N7261 |
International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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