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JANSR2N7396 |
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| Part Number | JANSR2N7396 |
| Manufacturer | Intersil Corporation |
| Description | The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET... |
| Features |
• 5A, 200V, rDS(ON) = 0.460Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 3.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7396 PACKAGE TO-205AF Also available at othe... |
| Document |
 JANSR2N7396 Data Sheet
PDF 44.99KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | JANSR2N7390 |
International Rectifier |
RADIATION HARDENED POWER MOSFET |
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| 2 | JANSR2N7390U |
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RADIATION HARDENED POWER MOSFET |
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| 3 | JANSR2N7391 |
International Rectifier |
N-CHANNEL MOSFET |
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| 4 | JANSR2N7392 |
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Radiation Hardened Power MOSFET |
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| 5 | JANSR2N7395 |
Intersil Corporation |
8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
| 6 | JANSR2N7397 |
Intersil Corporation |
4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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