Motorola 55N Hoja de datos

No.	parte #	Fabricante	Descripción
1	55N20E	Motorola	MTY55N20E EAS RθJC RθJA TL CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain C
2	MTB55N06Z	Motorola	TMOS POWER FET ppressor –Absorbs High Energy in the Avalanche Mode • ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model. D MTB55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mΩ ™ G CASE 418B –02, Style 2 D2PAK S
3	MTP55N06Z	Motorola	TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm High Energy in the Avalanche Mode • ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model. MTP55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mΩ ™ D G CASE 221A –06, Style 5 TO –220AB S MAXIMUM RATI
4	MTM55N10	Motorola	(MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
5	MTY55N20E	Motorola	TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM S RθJC RθJA TL CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Curr