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55N20E |
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| Part Number | 55N20E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY55N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET... |
| Features |
EAS RθJC RθJA TL
CASE 340G –02, STYLE 1 TO –264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 110 Apk, L = 0.3 mH, RG = 25 Ω ) Thermal Resistance — Junction to Case Thermal Resistanc... |
| Document |
 55N20E Data Sheet
PDF 175.62KB |
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